Silicon self diffusion coefficient

Diffusion of silicon in crystalline germanium H. H. Silvestri Department of Materials Science and Engineering, University of California, Berkeley, agreement between the Ge selfdiffusion coefficient and the contribution of vacancies to atom jumps to another interstitial position. Interstitialcy diffusion results from silicon selfinterstitials displacing substitutional impurities to Silicon self diffusion coefficient interstitial position requires the presence of silicon selfinterstitials, the impurity interstitial may then knock a silicon lattice atom into a selfinterstitial position.

Silicon selfdiffusion coefficients (D Si) in dry synthetic forsterite single crystals were measured at temperatures of 1600 and 1800 K, from ambient pressure up to 13 GPa using an ambient pressure furnace and Kawaitype multianvil apparatus. Silicon selfdiffusion coefficients (DSi) in dry synthetic forsterite single crystals were measured at temperatures of 1600 and 1800 K, from ambient pressure up to 13 GPa using an ambient pressure Your suggestion from the electronic structure point of view is interesting.

One wellknown fact for gold diffusion in Si is that it diffuses interstitially by the kickout mechanism. Also, the effective diffusivity of gold in Si is largely influenced by coupled diffusion of Si vacancies and selfinterstitials. Silicon selfdiffusion coefficients were determined by studying the diffusion of 31Si into silicon crystals of various degrees of perfection and doping. For intrinsic silicon, the selfdiffusion coefficient can be represented by D9, 000 exp (5. 13 eVkT) cm2sec.

Doping above intrinsic levels increases the diffusion coefficient. Silicon selfdiffusion in wadsleyite: Implications for rheology of the mantle transition zone and subducting plates Akira Shimojuku, 1 Tomoaki Kubo, 1, 2 Eiji Ohtani, 1 and Hisayoshi Yurimoto 3 Silicon selfdiffusion coefficients in MgSiO perovskite were measured under lower mantle conditions. The MgSiO 3 3 perovskite was synthesized and diffusion annealing experiments were conducted at pressure of 25 GPa and temperature of



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